Part Number : 1DTD912908-4
NSN : 5961-01-144-4879 (5961011444879)
Alternate P/N : 1DTD9129084
INC Code : 20588
NCB Code : 01
FSG : 59 Electrical and Electronic Equipment Components
NIIN : 01-144-4879 (011444879)
Country : USA
Submit your RFQ below for Bae Systems Information And Electronic Systems Integration Inc Part 1DTD912908-4, a high-quality Transistor with NSN 5961011444879. Aviation Orbit provides a fast and reliable procurement solution for this part 1DTD912908-4, sourced directly from Bae Systems Information And Electronic Systems Integration Inc (CAGE Code: 80249). The NSN 5961011444879 classifies this item under FSG 59 Electrical and Electronic Equipment Components and FSC 5961 Semiconductor Devices and Associated Hardware, ensuring compliance with military and aviation standards.
For further identification, the NIIN 01-144-4879 confirms an NCB of 01 (origin: USA), while the INC 20588 provides additional classification details. Aviation Orbit streamlines the purchasing process, offering competitive pricing and dependable sourcing for Bae Systems Information And Electronic Systems Integration Inc components. Submit your RFQ today for a quick response and seamless procurement experience.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-01-144-4879 Item Description: Transistor | 5961 | 011444879 | 0 | N | A | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | A | A | ||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
1dtd912908-4 | 3 | 2 | 3 |
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 1 550 INCHES MAXIMUM |
ABKW | OVERALL HEIGHT | 0 250 INCHES MINIMUM AND 0 300 INCHES MAXIMUM |
ABMK | OVERALL WIDTH | 1 050 INCHES MAXIMUM |
AKPV | MOUNTING FACILITY QUANTITY | 2 |
ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCILJEDECCASE OUTLINE DESIGNATION | TO-204AA |
ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
AXGY | MOUNTING METHOD | UNTHREADED HOLE |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 1500 0 MAXIMUM BREAKDOWN VOLTAGE COLLECTOR-TO-EMITTER WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER |
FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT NPN |
TTQY | TERMINAL TYPE AND QUANTITY | 1 CASE AND 2 PIN |
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