Part Number : DM28C256-200 B
Manufacturer : Seeq Technology Inc
NSN : 5962-01-318-6685
(5962013186685)
Alternate P/N : DM28C256200B
You can submit the RFQ form below for Part Number DM28C256-200 B, Microcircuit Memory by Manufacturer Seeq Technology Inc with NSN 5962013186685. Please ensure that all information is appropriately filled. These answers will help us offer you a better service.
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-318-6685 Item Description: Microcircuit Memory | 5962 | 013186685 | 0 | N | D | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | D | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
Dm28c256-200 B | 2 | 1 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQZP | INPUT CIRCUIT PATTERN | 26 INPUT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-10 MIL-M-38510 |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM POWER SOURCE AND 6.25 VOLTS MAXIMUM POWER SOURCE |
CZER | MEMORY DEVICE TYPE | ROM |
CZZZ | MEMORY CAPACITY | UNKNOWN |
FEAT | SPECIAL FEATURES | NUCLEAR HARDNESS CRITICAL ITEM |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
ADAQ | BODY LENGTH | 1.490 INCHES MAXIMUM |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CRTL | CRITICALITY CODE JUSTIFICATION | FEAT |
ADAU | BODY HEIGHT | 0.217 INCHES MAXIMUM |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND ERASABLE AND W/ENABLE |
CZEQ | TIME RATING PER CHACTERISTIC | 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
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