Part Number : EF6810CMB B
Manufacturer : Stmicroelectronics Ltd
NSN : 5962-01-214-3227 (5962012143227)
Alternate P/N : EF6810CMBB
INC Code : 41015
NCB Code : 01
FSG : 59 Electrical and Electronic Equipment Components
NIIN : 01-214-3227 (012143227)
Country : USA
Submit your RFQ below for Stmicroelectronics Ltd Part EF6810CMB B, a high-quality Microcircuit Memory with NSN 5962012143227. Aviation Orbit provides a fast and reliable procurement solution for this part EF6810CMB B, sourced directly from Stmicroelectronics Ltd (CAGE Code: 57962). The NSN 5962012143227 classifies this item under FSG 59 Electrical and Electronic Equipment Components and FSC 5962 Microcircuits Electronic, ensuring compliance with military and aviation standards.
For further identification, the NIIN 01-214-3227 confirms an NCB of 01 (origin: USA), while the INC 41015 provides additional classification details. Aviation Orbit streamlines the purchasing process, offering competitive pricing and dependable sourcing for Stmicroelectronics Ltd components. Submit your RFQ today for a quick response and seamless procurement experience.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-214-3227 Item Description: Microcircuit Memory | 5962 | 012143227 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| Ef6810cmb B | 1 | 9 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH1 290 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 500 INCHES MINIMUM AND 0 610 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 210 INCHES MAXIMUM |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND 3-STATE OUTPUT AND BIDIRECTIONAL |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN14 INPUT |
| MEMORY | CRHL | BIT QUANTITY1024 |
| MEMORY | CSWJ | WORD QUANTITY128 |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-3 MIL-M-38510 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 3 VOLTS MAXIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | FEAT | SPECIAL FEATURESWARNING VOLTAGE SENSITIVE DEVICE |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
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