Part Number : WS57C49
Manufacturer : Waferscale Integration Inc
NSN : 5962-01-327-1226 (5962013271226)
FSG : 59 Electrical and Electronic Equipment Components
NIIN : 01-327-1226 (013271226)
Country : USA
Submit your RFQ below for Waferscale Integration Inc Part WS57C49, a high-quality Microcircuit Memory with NSN 5962013271226. Aviation Orbit provides a fast and reliable procurement solution for this part WS57C49, sourced directly from Waferscale Integration Inc (CAGE Code: 66579). The NSN 5962013271226 classifies this item under FSG 59 Electrical and Electronic Equipment Components and FSC 5962 Microcircuits Electronic, ensuring compliance with military and aviation standards.
For further identification, the NIIN 01-327-1226 confirms an NCB of 01 (origin: USA), while the INC 41015 provides additional classification details. Aviation Orbit streamlines the purchasing process, offering competitive pricing and dependable sourcing for Waferscale Integration Inc components. Submit your RFQ today for a quick response and seamless procurement experience.
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN14 INPUT |
| MEMORY | CSWJ | WORD QUANTITY8192 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
| MEMORY | ADAQ | BODY LENGTH1 290 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 150 INCHES MAXIMUM |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CRHL | BIT QUANTITY65536 |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | ADAT | BODY WIDTH0 610 INCHES MAXIMUM |
| MEMORY | CBBL | FEATURES PROVIDEDMONOLITHIC AND PROGRAMMABLE AND ERASABLE |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-3 MIL-M-38510 |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
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